کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545847 1450556 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET
چکیده انگلیسی

This paper presents a methodology and tool based on 3D electro-thermal finite elements modeling intended to analyze the sequence of the events after emergence of defects in automotive power MOSFETs. Finite element modeling of power device and its nearby environment is detailed. The effects of delamination and bonding wire lift off on device transient electro-thermal behavior are investigated during a short circuit mode. Thus it helps to quantify the electro-thermal impact of the damages. Such modeling is useful for optimization of structure design to guarantee a longer lifespan.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1464–1467
نویسندگان
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