Effect of Cd content and sulfurization on structures and properties of Cd doped Cu2SnS3 thin films

The Cu-Sn-S-Cd alloy thin fims with different Cd contents were prepared by spin-coating the precursor solution with different Cd/Sn ratios (x = 0-1.5) follow by sulfurizing at 540 °C for 30 min. The bandgap of the CTS:Cd is related to the Cd doping content for the as-prepared Cu-Sn-S-Cd fims. While, the sulfurization process can change crystalline structure, improve crystalline quality and tune band gap of the CTS and CCTS films at the same Cd doping content compared with the as-prepared films.261