کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545860 | 1450556 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The thermal distribution in large DMOS output transistors of a half-bridge driver IC fabricated in smart-power SOI technology is investigated by the backside transient interferometric mapping (TIM) technique during its thermal shutdown process. The TIM measurements uncovers four hot spots, where the temperature exceeds the limit of the built in temperature sensor. This explains the specific failure mode which was identified during accelerated reliability tests. The TIM results are complemented by temperature measurements with the build-in temperature sensors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1525–1528
Journal: Microelectronics Reliability - Volume 48, Issues 8–9, August–September 2008, Pages 1525–1528
نویسندگان
M. Heer, P. Grombach, A. Heid, D. Pogany,