A simple route to deposit SiO2 film with resistivity >109 Ω·μm

Amorphous SiO2 film was deposited by the direct current pulsed magnetron sputtering technology, which the reciprocating motion was carried out onto the substrate. Without reciprocating motion, the resistivity of SiO2 film was only about 3.3 × 106 Ω·μm. With 500 circles reciprocating motion, the resistivity increased to 1.9 × 109 Ω·μm. Transmission electron microscopy results revealed that the straight line structure with lower local atomic density passed over SiO2 film, which deteriorated the resistivity seriously. The reciprocating motion of substrate could destroy above straight line structure to pass over SiO2 film, which kept SiO2 film with resistivity at 109 Ω·μm.