کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5462598 | 1517178 | 2018 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of Zn incorporation on the optical band gap of CuGaS2: Ti thin films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A novel intermediate band (IB) material of Zn incorporation in Ti-doped CuGaS2 thin films has been successfully fabricated via a facile non vacuum method including ball milling, spin-coating and annealing. Experimental results have shown that the IB position of Ti-doped CuGaS2 thin films can be adjusted by Zn incorporation. In this study, the optical band gap has a shortening of 0.19Â eV when 0.6% Zn is added to the 1.5% Ti-doped CuGaS2. Due to the Zn addition, the grains grow larger, which is observable from the surface morphology of the thin films using scanning electron microscope (SEM). The energy dispersive X-ray analysis (EDAX) spectrum demonstrates that ball milling can effectively make Ti and Zn elements co-coped evenly into CuGaS2 thin films. Moreover, the improved optical property of the Ti-doped CuGaS2 thin films due to the Zn incorporation also sheds lights in developing new material that could be a potential light absorption layers candidate of high efficiency solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 210, 1 January 2018, Pages 70-72
Journal: Materials Letters - Volume 210, 1 January 2018, Pages 70-72
نویسندگان
Qingyan Li, Jiawei Wu, Yanlai Wang, Wenliang Fan, Jun Zhu, Xiaojing Wang, Ying Yang,