کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5462656 | 1517178 | 2018 | 4 صفحه PDF | دانلود رایگان |
- CdCu3Ti4O12 (CdCTO) ceramics were fabricated via the sol-gel technique.
- A giant permittivity and low loss tangent: εr â 6.0 Ã 104 and tan δ = 0.056 (1 kHz) could be obtained in CdCTO ceramics sintered at 1000 °C. The dielectric constant is about 145 times higher than that reported by M.A. Subramanian et al. in 2002.
- The giant permittivity of CdCTO ceramics was attributed to internal barrier layer capacitor (IBLC) theory.
- X-ray photoelectron spectroscopy (XPS) indicated mixed valence states of Cu+/Cu2+ and Ti3+/Ti4+ of the sample.
CdCu3Ti4O12 (CdCTO) ceramics were fabricated using a sol-gel technique, which performed an unconventional giant permittivity (GP) and low dielectric loss: εr â 6.0 Ã 104 and tan δ = 0.056 (at 1 kHz). The abnormal dielectric peaks could be ascribed to the contribution of doubly-ionized oxygen vacancies at high temperature range. In addition, the GP phenomenon of CdCTO ceramics were attributed to the internal barrier layer capacitor (IBLC) theory. The results of X-ray photoelectron spectroscopy (XPS) indicated the mixed valence states of Cu+/Cu2+ and Ti3+/Ti4+ of samples.
Journal: Materials Letters - Volume 210, 1 January 2018, Pages 301-304