کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
5462656 1517178 2018 4 صفحه PDF سفارش دهید دانلود کنید
عنوان انگلیسی مقاله ISI
Fabrication and characterization of CdCu3Ti4O12 ceramics with colossal permittivity and low dielectric loss
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Fabrication and characterization of CdCu3Ti4O12 ceramics with colossal permittivity and low dielectric loss
چکیده انگلیسی


- CdCu3Ti4O12 (CdCTO) ceramics were fabricated via the sol-gel technique.
- A giant permittivity and low loss tangent: εr ≈ 6.0 × 104 and tan δ = 0.056 (1 kHz) could be obtained in CdCTO ceramics sintered at 1000 °C. The dielectric constant is about 145 times higher than that reported by M.A. Subramanian et al. in 2002.
- The giant permittivity of CdCTO ceramics was attributed to internal barrier layer capacitor (IBLC) theory.
- X-ray photoelectron spectroscopy (XPS) indicated mixed valence states of Cu+/Cu2+ and Ti3+/Ti4+ of the sample.

CdCu3Ti4O12 (CdCTO) ceramics were fabricated using a sol-gel technique, which performed an unconventional giant permittivity (GP) and low dielectric loss: εr ≈ 6.0 × 104 and tan δ = 0.056 (at 1 kHz). The abnormal dielectric peaks could be ascribed to the contribution of doubly-ionized oxygen vacancies at high temperature range. In addition, the GP phenomenon of CdCTO ceramics were attributed to the internal barrier layer capacitor (IBLC) theory. The results of X-ray photoelectron spectroscopy (XPS) indicated the mixed valence states of Cu+/Cu2+ and Ti3+/Ti4+ of samples.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 210, 1 January 2018, Pages 301-304
نویسندگان
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