کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5462670 1517178 2018 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Quantum confinement effect and size-dependent photoluminescence in laser ablated ultra-thin GZO films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Quantum confinement effect and size-dependent photoluminescence in laser ablated ultra-thin GZO films
چکیده انگلیسی
The structural, morphological, and optical characteristics of GZO ultra-thin films were investigated using XRD (X-ray diffraction), FE-SEM (field emission electron microscopy), in situ EDS (Energy Dispersive X-ray) spectroscopy, UV-VIS-IR spectroscopy and photoluminescence spectroscopy (PL) respectively. Morphological analysis reveals the noodle, seed and particle like structure of GZO for GaN, sapphire and Si substrates respectively with average grain size ranging from 5 to 20 nm. An effective mass model (EM-Model) for particle in a cylindrical wave function of e-h pair was correlated with experimental results. The reduction in FWHM value (from 31 nm to 13 nm) of NBE (near-band-edge) emission peak and enhanced NBE intensity have been achieved with small grain size. Blue shift in optical band gap is explained in term of grain radius by EM-model. Improved optical and structural properties were found in relation with quantum confinement effect. The current study states that grain size plays vital role in order to tailor optical properties of GZO thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 210, 1 January 2018, Pages 358-362
نویسندگان
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