کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5462684 1517180 2017 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Porosity-induced weakening of piezoresponse in GaN layers by means of piezoelectric force microscopy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Porosity-induced weakening of piezoresponse in GaN layers by means of piezoelectric force microscopy
چکیده انگلیسی
Nanoporous (NP) GaN thin films with low nucleation density were fabricated via UV-assisted electrochemical etching approach. Under different applied biases, two NP samples with different porosities were fabricated. Piezoelectric characteristics of the fabricated samples were investigated using piezoresponse force microscopy. It was found that the nanopores have great influence on its piezoelectric characteristics such as weakening of piezoresponse and change of polarization orientation. During the performance of devices, the weakening of piezoresponse should be propitious to the optoelectronic and electronic stabilities of GaN-based devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 208, 1 December 2017, Pages 31-34
نویسندگان
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