کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5463818 | 1517184 | 2017 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature dependent properties of Al/rGO-ZnCdS Schottky diode and analysis of barrier inhomogeneities by double Gaussian distribution
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Here we report the temperature dependent performance of Al/rGO-ZnCdS Schottky barrier diode(SBD) in the range of 303Â K-453Â K. Ideality factor(n) and Series resistance(Rs) of the SBD decreased, while barrier height (BH)(Ïb0) increased with increasing temperature. Richardson constant (Aâ) was obtained as 2Â ÃÂ 10â8Â A/cm2Â K2 and 1.4Â ÃÂ 10â7Â A/cm2Â K2 in the temperature range 303-363Â K and 378-423Â K respectively, which are much lower than the theoretical value of 32Â A/cm2Â K2. The strong temperature dependence of BH and the large discrepancy in Aâ has been precisely explained by assuming a Gaussian distribution (GD) of the BHs due to BH inhomogeneities at the metal-semiconductor interface. The results reveal the existence of a double GD with mean BH values (Ïb0â¾) of 1.47Â eV and 1.26Â eV and standard deviations(Ïs) of 0.22Â V and 0.18Â V. The modified activation energy plot of ln(I0/T2)-(q2Ï2/2k2T2) yields Ïb0â¾ and Aâ values as 1.49 and 1.26Â eV, and 59.18Â A/cm2Â K2 and 32.29Â A/cm2Â K2, respectively. Particularly the Aâ value of 32.29Â A/cm2Â K2 is extremely close to the theoretical value. The analysis confirmed that temperature dependent I-V characteristics of our SBD can be successfully explained with a double GD of the BHs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 204, 1 October 2017, Pages 184-187
Journal: Materials Letters - Volume 204, 1 October 2017, Pages 184-187
نویسندگان
Mrinmay Das, Joydeep Datta, Arka Dey, Soumi Halder, Sayantan Sil, Partha Pratim Ray,