کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5463833 1517191 2017 13 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The influence of anatase titanium dioxide film (0 0 1) preferred orientation on N implantation process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
The influence of anatase titanium dioxide film (0 0 1) preferred orientation on N implantation process
چکیده انگلیسی
Anatase TiO2 films with different level of (0 0 1) preferred orientation were implanted by N ion beam and N doped TiO2 films were obtained. XPS results showed N was about 7.86 ± 0.65 at.% for all N doped TiO2 films, which was chemically bonded as Ti-N and O-N bonds. The ratio of Ti-N/O-N was about 0.81 and 1.56 for N doped TiO2 film with and without (0 0 1) preferred orientation, respectively. Based on the schematic illustration of unrelaxed clean (0 0 1) and (1 0 1) surface of anatase TiO2, the changing of N chemical bond structure and Ti-N/O-N ratio were logically discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 197, 15 June 2017, Pages 28-30
نویسندگان
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