کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466003 | 1517976 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Opto-electrical characterisation of In-doped SnS thin films for photovoltaic applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Spray pyrolised SnS thin films doped with indium were studied using various optical and electrical techniques. Structural analysis shows that all films crystallise in an orthorhombic structure with (111) as a preferential direction, without secondary phases. The doping of SnS layers with indium results in better morphology with increased grain size. Absorption measurements indicate a dominant direct transition with energy decreasing from around 1.7Â eV to 1.5Â eV with increased indium supply. Apart from the direct transition, an indirect one, of energy of around 1.05Â eV, independent of indium doping, was identified. The photoluminescence study revealed two donors to acceptor transitions between two deep defect levels and one shallower one, with an energy of around 90Â meV. The observed transitions did not depend significantly on In concentration. The conductivity measurements reveal thermal activation of conductivity with energy decreasing from around 165Â meV to 145Â meV with increased In content.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 636, 31 August 2017, Pages 158-163
Journal: Thin Solid Films - Volume 636, 31 August 2017, Pages 158-163
نویسندگان
A. Urbaniak, M. PawÅowski, M. Marzantowicz, T. Sall, B. MarÃ,