کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5466003 1517976 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Opto-electrical characterisation of In-doped SnS thin films for photovoltaic applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Opto-electrical characterisation of In-doped SnS thin films for photovoltaic applications
چکیده انگلیسی
Spray pyrolised SnS thin films doped with indium were studied using various optical and electrical techniques. Structural analysis shows that all films crystallise in an orthorhombic structure with (111) as a preferential direction, without secondary phases. The doping of SnS layers with indium results in better morphology with increased grain size. Absorption measurements indicate a dominant direct transition with energy decreasing from around 1.7 eV to 1.5 eV with increased indium supply. Apart from the direct transition, an indirect one, of energy of around 1.05 eV, independent of indium doping, was identified. The photoluminescence study revealed two donors to acceptor transitions between two deep defect levels and one shallower one, with an energy of around 90 meV. The observed transitions did not depend significantly on In concentration. The conductivity measurements reveal thermal activation of conductivity with energy decreasing from around 165 meV to 145 meV with increased In content.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 636, 31 August 2017, Pages 158-163
نویسندگان
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