کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466156 | 1517982 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theoretical study of the carrier effective mass in diluted III-N-V semiconductor alloys by using 10-band k.p model
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The dependence of carrier effective mass of GaNxAs1 â x, InNx P1 â x, InNxAs1 â x, and InNxSb1 â x alloys on nitrogen content is investigated using a 10-band k.p model. The electron effective mass meâ at the bottom of conduction band in GaNxAs1 â x and InNxP1 â x exhibits a gradual increase as a function of N concentration in the range 0 â 1% and a decrease of x value between 1 and 5%. However, the behavior of meâ in InNxAs1 â x and InNxSb1 â x shows a strong decrease in all studied x-range. Our results are compared to the available data reported in the literature. On the other hand, contrary to heavy-hole effective mass mhhâ, the light-hole effective mass mlhâ in all studied alloys is significantly affected by nitrogen states, which modify the non-parabolicity of the LH band. The modification of the carrier effective mass affects the transport properties of the III-N-V alloys.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 630, 30 May 2017, Pages 25-30
Journal: Thin Solid Films - Volume 630, 30 May 2017, Pages 25-30
نویسندگان
K. Chakir, C. Bilel, M.M. Habchi, A. Rebey, B. El Jani,