Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 μm

The optical properties of p-type doped lattice matched GaNAsBi/GaAs single quantum well (SQW) were theoretically studied in order to reach the maximum of absorption at 1.55 μm telecommunication wavelength. The calculation was performed using a numerical method based on the mixture of a self-consistent procedure and the band anticrossing model. We investigated the effect of p doping density in the well GaNAsBi on the subband energies, Fermi level and the confining hole density distribution for the specific couple (well width, Bi composition), with respect to confinement conditions. The increase of doping density led to a shift of the fundamental transition to blue. The effect of the applied electric field on the physical parameters was also examined. It was found that unlike the n-type doping, p-type doping of the studied SQW obeys the restrictive conditions determined in this work.