Synthesis of p-n junctions in ZnO nanorods by O+ ion implantation

Tandem p-n junctions have been synthesized in ZnO nanorods (NRs) by implantation of 50 and 350 keV O+ ions. Conducting-AFM measurements reveal the formation of Schottky like junctions between AFM tip and NRs. Photoluminescence measurements demonstrate the recovery of near band edge (NBE) emission upon annealing, while an additional dominant deep level emission is also observed. De-convolution analysis shows that these peaks originate from Oxygen interstitials (Oi) and may contribute to p-type conductivity in ZnO NRs. Such implanted NRs, may be suitable for green emissions and p-type conductivity.