کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5467910 | 1518628 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au7+ ion irradiation with 100Â MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0Â 0Â 0Â 2) and (1Â 0Â â1Â 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1Â ÃÂ 1011 and 5Â ÃÂ 1012Â ions/cm2 compared to the pristine QW structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 394, 1 March 2017, Pages 81-88
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 394, 1 March 2017, Pages 81-88
نویسندگان
K. Prabakaran, R. Ramesh, M. Jayasakthi, S. Surender, S. Pradeep, M. Balaji, K. Asokan, K. Baskar,