کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5468292 1518930 2017 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
BaxSr1−xTiO3 sensing membrane in electrolyte-insulator-semiconductor structure with rapid thermal annealing in N2 ambient
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
BaxSr1−xTiO3 sensing membrane in electrolyte-insulator-semiconductor structure with rapid thermal annealing in N2 ambient
چکیده انگلیسی
Ion-sensitive field - effect transistor (ISFET) biosensors were fabricated with a pH-sensitive BaxSr1−xTiO3 membrane on silicon substrates in an Electrolyte-Insulator-Semiconductor (EIS) structure. To investigate the effects of annealing in N2 ambient, multiple material analyses including XRD and AFM were performed. Results indicate that the annealing treatment might deteriorate the crystallization. Therefore, the sensing behaviours in terms of sensitivity, linearity, hysteresis effects, and drift rates might be worsened. In this research, BaxSr1−xTiO3 membranes in an EIS structure with a high sensitivity and linearity were made. However, owing to its special and complicated structures, high-temperature thermal annealing was not suitable for the BaxSr1−xTiO3 membrane to further boost its sensing capability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 140, June 2017, Pages 3-6
نویسندگان
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