کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5468292 | 1518930 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
BaxSr1âxTiO3 sensing membrane in electrolyte-insulator-semiconductor structure with rapid thermal annealing in N2 ambient
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Ion-sensitive field - effect transistor (ISFET) biosensors were fabricated with a pH-sensitive BaxSr1âxTiO3 membrane on silicon substrates in an Electrolyte-Insulator-Semiconductor (EIS) structure. To investigate the effects of annealing in N2 ambient, multiple material analyses including XRD and AFM were performed. Results indicate that the annealing treatment might deteriorate the crystallization. Therefore, the sensing behaviours in terms of sensitivity, linearity, hysteresis effects, and drift rates might be worsened. In this research, BaxSr1âxTiO3 membranes in an EIS structure with a high sensitivity and linearity were made. However, owing to its special and complicated structures, high-temperature thermal annealing was not suitable for the BaxSr1âxTiO3 membrane to further boost its sensing capability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 140, June 2017, Pages 3-6
Journal: Vacuum - Volume 140, June 2017, Pages 3-6
نویسندگان
Chyuan-Haur Kao, Wang Ting Chiu, Yi Cian Chen, Luo Yang, Shin Chieh Tsai, Ting Wei Chang, Ching-Tsan Tsai, Chan-Yu Lin, Hsiang Chen,