کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488149 | 1524073 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Incoherent control of optical bistability in an InGaN/GaN quantum dot nanostructure
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The manipulation of bistable curve in the infrared (IR) region has been investigated theoretically in a unidirectional ring cavity doped by a four-level InGaN/GaN quantum dot nanostructure. The four-level quantum dot nanostructure is designed numerically by using the Schrödinger and Poisson equations. By controlling the size of the quantum dot and external voltage, one can design a four-level quantum dot with appropriate energy levels which can be suitable for interaction with IR signals. It is realized that the incoherent pumping fields play an essential role in controlling the intensity threshold of optical bistability. Decoherence effects such as the dephasing rate and electron density of the quantum dot are also analyzed at the threshold of optical bistability. Our proposed model due to its important application in all-optical systems may be favorable for real experimental evolution in infrared regions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chinese Journal of Physics - Volume 55, Issue 2, April 2017, Pages 423-431
Journal: Chinese Journal of Physics - Volume 55, Issue 2, April 2017, Pages 423-431
نویسندگان
G. Solookinejad, M. Panahi, E. Ahmadi Sangachin, Seyyed Hossein Asadpour,