کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488625 | 1524101 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low dark current in mid-infrared type-II superlattice heterojunction photodiodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A mid-infrared (MWIR, 3-5 μm) InAs/GaSb type-II superlattice (T2SL) photodiode device with very low dark current is presented. The novel heterojunction device is compared to a conventional pn-homojunction device. Photodetectors with reduced dark current allow an increased operating temperature and thus to lower the cooling requirements for high performance infrared imaging applications. We report on a dark current reduction by a factor of more than 100 at a typical operation voltage of â100 mV at 77 K, which was realized merely by device design. This measured dark current is the lowest reported to our knowledge for T2SL-detectors operating in the 3-5 μm range. At the same time, the photo current signal is unaffected by the heterostructure design over the entire bias voltage range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 85, September 2017, Pages 378-381
Journal: Infrared Physics & Technology - Volume 85, September 2017, Pages 378-381
نویسندگان
Johannes Schmidt, Frank Rutz, Andreas Wörl, Volker Daumer, Robert Rehm,