Effect of substrate temperature on self-assisted GaAs nanowires grown by Molecular Beam Epitaxy on GaAs (111)B substrates without SiO2 layer

- GaAs nanowires were grown by self-assisted VLS using MBE.
- Pure GaAs (111)B were used as substrates instead of GaAs covered with SiO2.
- Substrate temperature was varied to study the effect of growth temperature.
- Nanowire samples were characterized by SEM, EDX, XRD.

In this work, we demonstrate a self-assisted VLS growth of GaAs nanowires directly on GaAs (111)B substrates without assistance of SiO2 layer. We believe that with this technique, we can overcome some inherent problems that usually occur in conventional self-assisted VLS growth and simplify the process. Moreover, to study the effect of substrate temperature, each nanowire sample was fabricated at the different temperature from 400 °C to 600 °C using Molecular Beam Epitaxy (MBE) technique. Surface morphology, elemental composition, and crystal structure of nanowire samples were characterized by Scanning Electron Microscope (SEM), Energy-dispersive X-ray spectroscopy (EDX), and X-ray Diffraction Analysis (XRD) respectively.