کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
549166 872338 2013 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
FSI implications of EMC rheological properties to 3D IC with TSV structures during plastic encapsulation process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
FSI implications of EMC rheological properties to 3D IC with TSV structures during plastic encapsulation process
چکیده انگلیسی

In this paper, an efficient numerical approach has been adopted to analyze the fluid/structure interaction (FSI) implications to 3D IC with through-silicon via (TSV) structures during plastic encapsulation process, under the effect of different EMC rheological properties. A simultaneous or direct solution procedure is employed to solve the solution variables of fluid/structural domain together. Therefore, this approach can provide better visualization of the actual plastic encapsulation process by considering FSI phenomenon during the process. Different epoxy molding compound (EMC) rheological properties have resulted dissimilar fluid flow characteristics, pressure distribution, air void entrapment level, structural displacement and von Mises stress, which are discussed in the paper. Unfavorable results are obtained when higher viscous flow takes place. EMC flow front prediction has been validated with the experimental results from literature. The numerical approach and results presented in this paper are able to provide useful information for the works in optimizing plastic encapsulation process.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 53, Issue 4, April 2013, Pages 600–611
نویسندگان
, , , , ,