کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5491778 | 1525128 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical gain characteristics of a-plane GaN/AlGaN quantum well lasers grown on strain-engineered MgZnO layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Optical gain characteristics of a-plane (11 2¯ 0) AlGaN/GaN quantum well (QW) lasers grown on a GaN buffer with strain anisotropy using a strain-engineered MgZnO layer were investigated using the multiband effective mass theory. The calculated transition energies for QW structures grown on MgZnO layer are in good agreement with experimental results. The optical gain of the QW structure grown on the MgZnO substrate is dominated by the zâ²-polarization because the dominant states constituting the topmost valence subband for the QW structure changes from |Yâ²>âto|Zâ²>-like and carriers occupy higher states above kâ¥=0 at a higher carrier density. On the other hand, the optical gain of the QW structure grown on conventional GaN buffer is dominated by both yâ²- and zâ²-polarizations. Thus, the optical polarization characteristics of a-plane AlGaN/GaN QW lasers can be engineered by using MgZnO substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 521, 15 September 2017, Pages 32-35
Journal: Physica B: Condensed Matter - Volume 521, 15 September 2017, Pages 32-35
نویسندگان
Seoung-Hwan Park,