کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5491899 | 1525129 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influences of the properties of impurities and defects on the dark I-V characteristic curve and output parameters of c-Si solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The influences of the coating ratio of electrode, doping concentration of substrate and type of impurities and defects on the dark I-V characteristic curves and output parameters of c-Si solar cells are studied by finite difference method and the dark I-V characteristic curves under different conditions are analyzed by their ideal factors, the results show that: the dark current values under the same bias voltage will increase with the increasing of the coating ratio of electrode or doping concentration of substrate; the influences of donor-like, acceptor-like and recombination-center-like impurities and defects on the dark I-V characteristic curves have threshold effects; the parameters of the impurities and defects smaller than their corresponding threshold will have no obvious influences on dark I-V characteristic curves; the acceptor-like impurities and defects on the surface of c-Si solar cells have no influences on their dark I-V characteristic curve, but the donor-like and recombination-center-like impurities and defects have strong influences on their dark I-V characteristic curve; the variations of the output parameters of c-Si solar cells are analyzed in detail under the different properties of the impurities and defects inside and on the surfaces of c-Si solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 520, 1 September 2017, Pages 28-36
Journal: Physica B: Condensed Matter - Volume 520, 1 September 2017, Pages 28-36
نویسندگان
Xiaodong Lu, Yang Song, Jie Gao, Xinxin Wang, Yufeng Zhang,