کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5492027 1525137 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Features of tensoresistance depending on the crystallographic orientation of γ-irradiated (60Co) germanium and silicon single crystals
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Features of tensoresistance depending on the crystallographic orientation of γ-irradiated (60Co) germanium and silicon single crystals
چکیده انگلیسی
The features of the longitudinal tensoresistance of γ-irradiated (60Co) n-Ge and n-Si crystals, as well as γ-irradiated n-Ge crystals after n→p conversion, at fixed temperatures depending on the direction (X→∥J→∥ [111,110], [100]) of application of the mechanical compressive stress 0≤X≤1.2GPa were investigated. The charge carrier concentrations and the Hall mobility values before and after γ-irradiation were controlled by measurements of the Hall effect. It was established that under conditions of the nonsymmetrical arrangement of deformation axis relative to the isoenergetic ellipsoids, the dependences of tensoresistance in the γ-irradiated n-Ge and n-Si crystals pass through a maximum. With a symmetrical placement of the deformation axis such maximum is not observed. In the converted n-Ge crystals under applying of mechanical stress the presence of the region of the increasing resistivity in the initial area of deformation was found, which is explained by increase of the energy gap between the deep level and the top of the valence band with increasing pressure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 512, 1 May 2017, Pages 6-11
نویسندگان
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