کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5492142 | 1525140 | 2017 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The Cu2ZnSnS4 solar cell with high open circuit voltage
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The Cu2ZnSnS4 solar cell with high open circuit voltage The Cu2ZnSnS4 solar cell with high open circuit voltage](/preview/png/5492142.png)
چکیده انگلیسی
In this paper, the effects of two different sulfurization processes on the CZTS films were investigated, and the results indicated that a rapid high-temperature crystallization process after sulfurization was beneficial for CZTS thin films to obtain a compact and flat surface with large grains. However, a common sulfurization without rapid high-temperature crystallization process would easily lead to undesirable properties of films, such as rough surface with pin holes, which degenerate the performance of devices. Cu2ZnSnS4 (CZTS) solar cell based on a rapid high-temperature process after sulfurization achieved a high open circuit voltage of 722Â mV and the best efficiency 3.32% was obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 509, 15 March 2017, Pages 50-54
Journal: Physica B: Condensed Matter - Volume 509, 15 March 2017, Pages 50-54
نویسندگان
Min Yang, Xun Ma, Zhi Jiang, Zhishan Li, Sijia Liu, Yilei Lu, Shurong Wang,