کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5496816 | 1399868 | 2016 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Non-volatile resistive memory device fabricated from CdSe quantum dot embedded in thermally grown In2O3 nanostructure by oblique angle deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
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چکیده انگلیسی
In this paper we report In2O3/CdSe quantum dot based non-volatile resistive memory device with ON/OFF ratio â¼1000. Indium nanostructures were grown by oblique angle deposition technique in a thermal evaporator. Indium oxide nanostructures had size ranging from 20 nm to 100 nm as observed from TEM and AFM methods. The facile device fabricated with a layer of CdSe quantum dot on indium oxide film exhibited excellent endurance characteristics over 100,000 switching cycles. Retention tests showed good stability for over 4000 s. Memory operating mechanism is proposed based on charge trapping/de-trapping in quantum dots with indium oxide acting as barrier leading to Coulomb blockade. The mechanism is supported by negative differential resistance (NDR) observed exclusively in the ON state.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 380, Issue 44, 11 November 2016, Pages 3743-3747
Journal: Physics Letters A - Volume 380, Issue 44, 11 November 2016, Pages 3743-3747
نویسندگان
V. Kannan, Hyun-Seok Kim, Hyun-Chang Park,