کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5496865 | 1399871 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A novel graphene nanoribbon FET with an extra peak electric field (EFP-GNRFET) for enhancing the electrical performances
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work has provided an efficient technique to improve the electrical performance for the Graphene Nanoribbon Field Effect Transistors (GNRFETs) successfully. The physical gate length is divided into two gates named as the original gate and the other one as the virtual gate. We have applied a voltage source between these gates to control the channel of the GNRFETs. This technique has created an extra peak electric field in the middle of the channel resulting in the redistribution of surface potential profile. The proposed structure named as EFP-GNRFET has been compared with a simple GNRFET and has shown many improvements in terms of the critical parameters such as short channel effects, leakage current, subthreshold swing, ON-state to OFF-state current ratio, transconductance, output conductance and voltage gain. The structures under the study in this paper benefits from the Non-Equilibrium Green Function (NEGF) approach for solving Schrödinger equation coupled with the two-dimensional (2D) Poisson equation in a self-consistent manner.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 381, Issue 16, 25 April 2017, Pages 1379-1385
Journal: Physics Letters A - Volume 381, Issue 16, 25 April 2017, Pages 1379-1385
نویسندگان
Maedeh Akbari Eshkalak, Mohammad K. Anvarifard,