کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
595223 | 1454006 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Role of amines and amino acids in enhancing the removal rates of undoped and P-doped polysilicon films during chemical mechanical polishing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
شیمی کلوئیدی و سطحی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
During chemical mechanical polishing, removal rates of undoped and P-doped polysilicon films as high as 200 and 250 nm/min, respectively, have been achieved using several abrasive-free solutions, each consisting of an amine or amino acid. It was observed that only α-amine(s) solutions enhance the removal rates of both undoped and P-doped polysilicon films. Potentiodynamic, zeta potential, contact angle, thermo gravimetric and EDS measurements were performed to examine the role of these α-amines in achieving high polysilicon removal rate. Possible removal mechanism of both undoped and P-doped polysilicon film in the presence and absence of the different additives is also proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Colloids and Surfaces A: Physicochemical and Engineering Aspects - Volume 366, Issues 1–3, 20 August 2010, Pages 68–73
Journal: Colloids and Surfaces A: Physicochemical and Engineering Aspects - Volume 366, Issues 1–3, 20 August 2010, Pages 68–73
نویسندگان
P.R. Veera Dandu, B.C. Peethala, Naresh K. Penta, S.V. Babu,