CdS and CdSe quantum dots subsectionally sensitized solar cells using a novel double-layer ZnO nanorod arrays

We report a novel approach for synthesizing CdS and CdSe quantum dots subsectionally sensitized double-layer ZnO nanorods for solar cells, which are comprised of CdS QDs-sensitized bottom-layer ZnO NRs and CdSe QDs-sensitized top-layer ZnO NRs. X-ray diffraction study and scanning electron microscopy analysis indicate that the solar cells of subsectionally sensitized double-layer ZnO NRs, which are the hexagonal wurtzite crystal structure, have been successfully achieved. The novel structure enlarged the range of absorbed light and enhanced the absorption intensity of light. The I–V characteristics show that the double-layer structure improved both the current density (Jsc) and fill factor (FF) by 50%, respectively, and power conversion efficiency (η) was increased to twice in comparison with the CdS QDs-sensitized structure.

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► To prepare CdS and CdSe QDs-sensitized subsectionally double-layer ZnO NR arrays.
► The tops of ZnO nanorod were polished with a 2000 grit sand paper.
► CdS QDs inhibited sidewise-growing and fusing of down-layer ZnO NRs.
► The novel structure improved the absorbance of light and the η of solar cell.