کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6601575 | 459348 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Si-doped Fe2O3 nanotubular/nanoporous layers for enhanced photoelectrochemical water splitting
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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چکیده انگلیسی
The present work reports the enhancement of the photoelectrochemical water splitting performance of in-situ silicon (Si)-doped nanotubular/nanoporous (NT/NP) layers. These layers were grown by self-organizing anodization on Fe-Si alloys of various Si content. The incorporation of Si is found to retard the layer growth rates, leads to a more pronounced nanotubular morphology, and most importantly, an improved photoelectrochemical behavior. By increasing Si content from 1, 2 to 5 at.% in the iron oxide NT/NP photoanodes, the photocurrent onset potential shifts favorably to lower values. At 1.3 V vs. RHE, hematite layer with 5 at.% Si shows a 5-fold increase of the photocurrent, i.e. 0.5 mA cmâ 2 in comparison to 0.1 mA cmâ 2 for the undoped samples. The study also reveals that a suitable layer thickness is essential to achieve a beneficial effect of the Si doping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochemistry Communications - Volume 34, September 2013, Pages 308-311
Journal: Electrochemistry Communications - Volume 34, September 2013, Pages 308-311
نویسندگان
Chong-Yong Lee, Lei Wang, Yuya Kado, Robin Kirchgeorg, Patrik Schmuki,