کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6606878 | 459525 | 2016 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sn@SnO2 attached on carbon spheres as additive-free electrode for high-performance pseudocapacitor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Utilization of metal oxide/supports interface structures could generate high- performance electrochemical materials for clean energy storage and conversion. However, designing the metal oxide/supports interfaces with highly enhanced conductivity and cycle durability remains a significant challenge. Here, we demonstrate an in-situ growth technique to synthesize a Sn/SnO2@C composite with nano-Sn species attached on surface of carbon spheres (denoted as Sn/SnO2@C) during the carbonization of a sol-gel precursors of tin (IV) tetrachloride pentahydrate (SnCl4·5H2O) and Resorcinol-Formaldehyde (Sn4+-RF) in N2. We investigate the nucleation and crystal growth of Sn/SnO2 from Sn4+-RF precursor to Sn/SnO2@C composite with the variation of the concentration of acid value and heat-treatment temperature. Sn/SnO2@C-(1.0, 800) composite as supercapacitor electrode achieves a maximum specific capacitance of 906.8 F gâ1 at a scan rate of 1 mV sâ1 in 6 M KOH solution, and an excellent cycle durability of 2000 cycles at 5 A gâ1. The electrochemical performances demonstrate that charge storage occurs in Sn/SnO2@C mainly due to redox reactions between the binary oxidation states: SnâSn(OH)62â(IV) in basic electrolyte, hierarchical porosity and Sn/SnO2@C distinct structure, which is formed in situ. The work provides new insights into the rational design of Sn@C composites electrode materials for pseudocapacitor and other electrochemical devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 209, 10 August 2016, Pages 350-359
Journal: Electrochimica Acta - Volume 209, 10 August 2016, Pages 350-359
نویسندگان
Ying Yang, Suzhen Ren, Xuedan Song, Yanan Guo, Duanhui Si, Hongyu Jing, Shaobo Ma, Ce Hao, Min Ji,