An explicit analytical model for rapid computation of temperature field in a three-dimensional integrated circuit (3D IC)

• Presents an analytical model for the temperature distribution in 3D ICs.
• Results are in excellent agreement with finite element simulations.
• Model helps in rapid computation of temperature field in 3D ICs.
• Model helps understand thermal phenomena in 3D ICs.

3D integrated circuits (3-D ICs) technology is a promising approach for next-generation semiconductor microelectronics. A 3D IC is formed by vertical interconnection of multiple substrates containing active devices which offer reduced die footprint and interconnect length. Thermal management of a multi die stack is a significant research challenge, for which rapid temperature computation in a 3D IC is desirable. This manuscript presents a non-iterative heat transfer model for predicting the three-dimensional temperature field in a multi-die 3D IC. The non-iterative model is much faster and accurate in comparison to finite element simulation and recently presented iterative models for temperature computation. The analytical model is used to compute the temperature field of a 3D IC with a large number of die. The model is also used to examine the effect of various parameters on the computed temperature field. In particular, the effect of thermal contact resistance is presented. The model and results presented in this manuscript are expected be useful in rapid computation and effective thermal design of 3D ICs.