کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6745786 | 504973 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of substrate temperature on the growth and electrical properties of thermally evaporated Be films
ترجمه فارسی عنوان
تأثیر دمای سوبسترا بر رشد و خواص الکتریکی فیلمهای تحت حرارت گرمایی تبخیر شده
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کلمات کلیدی
فیلم ها باشید، بستر آب سرد بستر گرم رشد فیلم، مقاومت الکتریکی،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
مهندسی انرژی و فناوری های برق
چکیده انگلیسی
The Be films were prepared on the water-cooled substrates and heated substrates by thermal evaporation, respectively. The experiment of water-cooled substrate showed the grains in Be films grown on Si substrates were refined than those grown on glass substrates and the surface roughness of Be films grown on Si substrates was also improved. The electrical performance test suggested that the electrical resistivity of Be films grown on water-cooled substrates decreased with increasing the heating temperature and was bigger than that grown on non-water-cooled substrates. For the experiment of heated substrate, the Be films appeared the loose flocculent structure, and the surface roughness firstly increased from 8 nm to 45-65 nm in the range of 150-300 °C and then decreased to 10 nm at 400 °C. Meanwhile, its electrical resistivity sharply increased from 0.6 Ω/⡠to 206.6 Ω/⡠due to the gradual oxidization at high temperature, especially 400 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Fusion Engineering and Design - Volume 100, November 2015, Pages 307-313
Journal: Fusion Engineering and Design - Volume 100, November 2015, Pages 307-313
نویسندگان
Kai Li, Bing-chi Luo, Ji-qiang Zhang, Jia Li, Wei-dong Wu, Ying Liu,