کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
681847 888965 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of different pretreatment strategies on corn stalk acidogenic fermentation using a microbial consortium
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی تکنولوژی و شیمی فرآیندی
پیش نمایش صفحه اول مقاله
Effects of different pretreatment strategies on corn stalk acidogenic fermentation using a microbial consortium
چکیده انگلیسی

The effects of sulfuric acid, acetic acid, aqueous ammonia, sodium hydroxide, and steam explosion pretreatments of corn stalk on organic acid production by a microbial consortium, MC1, were determined. Steam explosion resulted in a substrate that was most favorable for microbial growth and organic acid productions. The total amounts of organic acids produced by MC1 on steam exploded, sodium hydroxide, sulfuric acid, acetic acid, and aqueous ammonia pretreated corn stalk were 2.99, 2.74, 1.96, 1.45, and 2.21 g/l, respectively after 3 days of fermentation at 50 °C. The most prominent organic products during fermentation of steam-exploded corn stalks were formic (0.86 g/l), acetic (0.59 g/l), propanoic (0.27 g/l), butanoic (0.62 g/l), and lactic acid (0.64 g/l) after 3 days of fermentation; ethanol (0.18 g/l), ethanediol (0.68 g/l), and glycerin (3.06 g/l) were also produced. These compounds would be suitable substrates for conversion to methane by anaerobic digestion.


► Effect of different pretreatment strategies on corn stalk acidification by a defined microbial consortium, MC1, was evaluated.
► Steam explosion was determined as the best pretreatment for corn stalk acidification by consortium MC1.
► Predication of amount of methane that could be produced from steam-exploded corn stalks was presented.
► Application perspective of consortium MC1 in potential biogas production from agricultural wastes was demonstrated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Bioresource Technology - Volume 102, Issue 16, August 2011, Pages 7526–7531
نویسندگان
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