کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945573 | 1450517 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by 60Co γ irradiation under different biases
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper evaluates enhanced low dose rate sensitivity (ELDRS) in Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) which are isolated by LOCOS process. The 60Co gamma irradiations were performed at 80â¯rad (Si)/s and 0.1â¯rad (Si)/s respectively in order to investigate dose rate dependence of the SiGe HBT. Devices were set in forward, saturated, cutoff, and all-grounded biases during the irradiation. The degradation mechanism of different dose rate irradiations was analyzed via measurement of forward Gummel mode and inverse Gummel mode both pre- and post- irradiation. The results show that ELDRS exists at forward, saturated, and all-grounded biases irradiations. The dose rate dependences of various irradiated biases are different in the SiGe HBT. The interface-traps both in EB Spacer and LOCOS are the major irradiated damages in the SiGe HBT for the low dose rate irradiation. ELDRS is directly related to the quality, thickness, and shape of oxide layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 84, May 2018, Pages 105-111
Journal: Microelectronics Reliability - Volume 84, May 2018, Pages 105-111
نویسندگان
Jin-xin Zhang, Qi Guo, Hong-Xia Guo, Wu Lu, Chao-hui He, Xin Wang, Pei Li, Lin Wen,