کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945747 | 1450519 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Micro-Raman spectroscopy applied in crystal structure analysis on the ESD failure mechanism of SiC JBS diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper propose a novel reliability analysis approach for electrostatic discharge (ESD) stress on 4H-SiC junction barrier Schottky (JBS) diodes using the technology of Micro-Raman spectroscopy. Several conventional analysis are firstly used to determine the failure site after the JBS diodes are destructed by ESD stress, including optical microscope (OM), Photoemission microscopy (PEM) and scanning electron microscopy (SEM). Then, the Micro-Raman spectroscopy is applied to analyze element identification and crystal structure of micro failure site. The analysis reveals that high electric field and high temperature concentrate in the high-voltage termination, resulting in diode burnout and changing the physical microstructure of base SiC. Furthermore, in the micro failure site, 4H-SiC with different Raman spectrum from base 4H-SiC are clearly found, and carbon escapes out from base SiC by combustion, leaving a mixture of amorphous silicon and polysilicon, which is decomposed from the base SiC on the failure surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 82, March 2018, Pages 37-41
Journal: Microelectronics Reliability - Volume 82, March 2018, Pages 37-41
نویسندگان
Yunpeng Jia, Zhenhua Lin, Dongqing Hu, Yu Wu, Peng Li, Guanghai Liu,