کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7133199 | 1461821 | 2018 | 25 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ion beam assisted fortification of photoconduction and photosensitivity
ترجمه فارسی عنوان
پرتو یون به تقویت هدایت نور و حساسیت به نور کمک می کند
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
چکیده انگلیسی
A new approach to substantially improve UV/Visible photo sensitivity of nanocrystalline CdS (nc-CdS) thin films is investigated. nc-CdS thin films grown on Si wafer by pulsed laser deposition followed by irradiation treatment were used to fabricate photo-sensors. Swift heavy ion irradiation (SHII) of the nc-CdS thin films was carried out using 70â¯MeV 58Ni6+ ions. The influence of irradiation fluence on the transport behaviour of nc-CdS is investigated by device performance under the illuminating light of wavelengths 355â¯nm, 405â¯nm and 470â¯nm. Indeed, the sensors presented here are easy to fabricate without requirement of rigorous synthesis procedure. Moreover, they illustrate characteristics similar to those of photo-sensors designed with complex structures and tedious procedures. The improvement in conductivity under the exposure of SHII is a consequence of enrichment in carrier concentration as reveals from current-voltage (I-V) measurements. The sensor exhibits improvements in the response time, responsivity, photosensitivity, quantum efficiency, and specific detectivity as a function of both the ion fluence and illuminating light wavelength. These sensors show superior value of all device parameters under the illumination wavelength 470â¯nm of visible light. The utmost values achieved for responsivity, sensitivity, external quantum efficiency, and specific detectivity are â¼ 82â¯A/W, 1.02â¯Ãâ¯103 %, 19.5â¯Ãâ¯103 %, and 5.05â¯Ãâ¯1011 cm Hz1/2Wâ1 respectively under same illumination at 5â¯V for 1â¯Ãâ¯1013 ions/cm2 irradiated photosensor. Under the same illumination, bias voltage and irradiation fluence the minimum value achieved for rise time and fall time is 183â¯ms and 61â¯ms respectively. A possible mechanism involved in both the SHII and illumination wavelength induced moderation of conductivity and consequently photosensitivity is explained on the basis of variation in the defect densities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 279, 15 August 2018, Pages 343-350
Journal: Sensors and Actuators A: Physical - Volume 279, 15 August 2018, Pages 343-350
نویسندگان
Pragati Kumar, Nupur Saxena, F. Singh, Vinay Gupta,