کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7133318 | 1461824 | 2018 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Avoiding blister defects in low-stress hydrogenated amorphous silicon films for MEMS sensors
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Low-stress silicon-based thin films play a crucial role in microelectromechanical systems (MEMS) such as silicon microphones. To obtain low stress, post annealing is usually applied and, in particular, the residual stress of hydrogenated amorphous silicon (α-Si:H) can be finely tuned by properly adjusting the annealing temperature to obtain slightly tensile thin films. However, blister defects are unfortunately observed in the course of stress control by high temperature annealing. We study structural parameters of thin films that may induce blistering behaviors and propose a statistical prediction model as a guide to avoid the blistering disaster for MEMS chips. By optimizing the shape, size, and thickness of thin films, the non-blister α-Si:H thin film with low stress of around 63â¯MPa is demonstrated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 276, 15 June 2018, Pages 11-16
Journal: Sensors and Actuators A: Physical - Volume 276, 15 June 2018, Pages 11-16
نویسندگان
Junli Wang, Lixiang Wu, Xi Chen, Wenjun Zhuo, Gaofeng Wang,