کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7150309 | 1462189 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Due to its mechanical flexibility, large bandgap and carrier mobility, atomically thin molybdenum disulphide (MoS2) has attracted widespread attention. However, it still lacks a facile route to fabricate a low-power high-performance logic gates/circuits before it gets the real application. Herein, we reported a facile and environment-friendly method to establish the low-power logic function in a single MoS2 field-effect transistor (FET) configuration gated with a polymer electrolyte. Such low-power and high-performance MoS2 FET can be implemented by using water-soluble polyvinyl alcohol (PVA) polymer as proton-conducting electric-double-layer (EDL) dielectric layer. It exhibited an ultra-low voltage (1.5â¯V) and a good performance with a high current on/off ratio (Ion/off) of 1â¯Ãâ¯105, a large electron mobility (µ) of 47.5â¯cm2/Vâ¯s, and a small subthreshold swing (S) of 0.26â¯V/dec, respectively. The inverter can be realized by using such a single MoS2 EDL FET with a gain of â¯â¼4 at the operation voltage of only â¯â¼1â¯V. Most importantly, the neuronal AND logic computing can be also demonstrated by using such a double-lateral-gate single MoS2 EDL transistor. These results show an effective step for future applications of 2D MoS2 FETs for integrated electronic engineering and low-energy environment-friendly green electronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 144, June 2018, Pages 1-6
Journal: Solid-State Electronics - Volume 144, June 2018, Pages 1-6
نویسندگان
Junjie Guo, Dingdong Xie, Bingchu Yang, Jie Jiang,