102 mJ electron-optic Q-switch Ho:ScSi2O5 laser end-pumped by continuous-wave Tm:YAP laser

Represented here is an electron-optic Q switch Ho:ScSi2O5 laser. A RTP crystal was employed as the Q-switch element. It is the first time to demonstrate an electron-optic Q switch Ho:ScSi2O5 laser, whose maximum single-pulse energy reaches around 102 mJ, corresponding to a maximum peak power of 2.91 MW. The laser performance is investigated as a function of the different repetition frequencies and incident pump power. We focus on the low frequencies (1, 2, 5, 8, 10, and 20 Hz) in this contribution, aiming to obtain a higher single-pulse energy. The beam quality M2 factor of the electron-optic Q switch Ho:ScSi2O5 laser is measured by knife-edge method, which is calculated to be 1.24.