کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7224859 | 1470571 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of the nanosandwiched Ga2S3/In/Ga2S3 interfaces as microwave filters and thermally controlled electric switches
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, an indium layer of 50Â nm thicknesses is sandwiched between two 500Â nm thick Ga2S3 layers. The effect of indium nansandwiching on the composition, structure, morphology, light absorbability, capacitance and reactance spectra, and temperature dependent electrical conductivity of the Ga2S3 films are investigated by means of X-ray diffraction, scanning electron microscopy, energy dispersion X-ray spectroscopy, Raman spectroscopy, visible light spectrophotometry, impedance spectroscopy and current voltage characteristics. While the nansandwiched films are observed to exhibit an amorphous nature of structure with indium content of Owing to the nucleation mechanisms that take place during the film growth, the accumulation of some unit cells in groups to form grains should be a significant reason for the existence of many different sizes of grains in the nanosandwiched films (Alharbi and Qasrawi, 2016). O, the Raman spectra displayed three vibrational modes at 127.7, 145.0 and 274.3Â cmâ1. It was also observed that the indium insertion in the structure of the Ga2S3 shrinks the energy band gap by 0.18Â eV. The nanosandwiched films are observed to exhibit a semiconductor âmetal (SM) transition at 310Â K. The SM transition is associated with thermal hysteresis that exhibited a maximum value of 16% at 352Â K. This behavior of the nanosandwiched films nominate it for use as thermally controlled electric switches. In addition, the impedance spectral analysis in the range of 10-1800Â MHz has shown a capacitance tunability of more than 70%. The measurements of the wave trapping property displayed a bandpass/reject filter characteristics above 1.0Â GHz which allow using the Ga2S3/In/Ga2S3 thin films as microwave resonator.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - Volume 156, March 2018, Pages 93-98
Journal: Optik - Volume 156, March 2018, Pages 93-98
نویسندگان
S.R. Alharbi, Eman O. Nazzal, A.F. Qasrawi,