Positive magnetoresistive effect in Si/SiO2(Cu/Ni) nanostructures

• Nanoporous dielectric (SiO2) matrix on the n-Si substrate was created using the swift heavy ion track technology.
• Alternated layers of Cu and Ni in the pores of SiO2 on a silicon substrate were formed by electrochemical deposition.
• Conduction mechanisms dominating in different temperature regions of Si/SiO2(Cu/Ni) structures were determined.
• A positive magnetoresistance reaching 30% and 1000% was detected in temperature ranges of 175–300 K and lower than 50 K.
• The novel sensitive element of a magnetic field sensor was developed.

A structure consisting of a nanoporous dielectric film (SiO2) containing alternated layers of metal (Cu/Ni) in the pores on a n-type semiconductor substrate has been formed using the swift heavy ion track technology. Investigations of electrical and galvanomagnetic characteristics of this structure have made it possible to determine conduction mechanisms dominating in different temperature regions. A positive magnetoresistance reaching 30% and 1000%, respectively, was detected in temperature ranges of 175–300 K and lower than 50 K. Si/SiO2(Cu/Ni) structures could be employed as novel sensitive elements for magnetic field sensors.