Pseudo-Boltzmann model for modeling the junctionless transistors

• Pseudo-Boltzmann approximation to calculate the electron concentration.
• A model for the drain current of highly doped junction-less transistors.
• A new approximation to Fermi-Dirac statistics to model junction-less devices.

Calculation of the carrier concentrations in semiconductors using the Fermi-Dirac integral requires complex numerical calculations; in this context, practically all analytical device models are based on Boltzmann statistics, even though it is known that it leads to an over-estimation of carriers densities for high doping concentrations. In this paper, a new approximation to Fermi-Dirac integral, called Pseudo-Boltzmann model, is presented for modeling junctionless transistors with high doping concentrations.