Field controlled RF Graphene FETs with improved high frequency performance

• We propose 5-terminal Graphene FETs with two field controlling electrodes (FCEs).
• The FCEs at the access regions are capacitively coupled and independently biased.
• Biased FCEs induce additional carriers, reduce access resistance and increase fT.
• For hole regime operation, the fT improvement is up to 26.7%.
• For electron regime operation, the fT improvement is up to 33.3%.

We propose a novel Graphene FET (GFET) with two capacitively coupled field-controlling electrodes (FCEs) at the bottom of the ungated access regions between gate and source/drain. The FCEs could be independently biased to modulate sheet carrier concentration and thereby the resistance in the ungated regions. The reduction of source/drain access resistance results in increased cut off frequency compared to those of conventional GFETs with the same geometry. We studied the DC and improved RF characteristics of the proposed device using both analytical and numerical techniques and compared with the baseline designs.