کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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747730 | 1462222 | 2015 | 5 صفحه PDF | دانلود رایگان |
We examined the formation of polycrystalline-Si1−x−yGexSny layers on SiO2 by the solid phase crystallization method. We investigated the impact of Sn incorporation on the polycrystallization, crystallinity, and electrical property of Si1−xGex layers. We found that the polycrystallization time of Si1−x−yGexSny decreases with increasing in the Sn content in the annealing at 500 °C. No Sn precipitation is observed after the crystallization of Si1−x−yGexSny layer with an Sn content of 2%, while severe Sn precipitation is found in the sample with an Sn content of 10%. Moreover, larger grains of polycrystal can be obtained by the incorporation of 2%-Sn with comparison to that without Sn. The enlargement of polycrystalline grain of Si1−x−yGexSny improves in the hole mobility to 74 cm2/V s.
Journal: Solid-State Electronics - Volume 110, August 2015, Pages 54–58