کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
748132 | 894736 | 2009 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The Lorentzian-like noise induced by Electron Valence Band (EVB) tunneling has been investigated in n- and p-channel multiple-gate field-effect transistors (MuGFETs), processed on silicon-on-insulator (SOI) and strained SOI (sSOI) substrates. The effect has been studied for different back-gate and front-gate biases and as a function of the device geometry. Similar as for wide fully depleted SOI transistors, this type of excess low-frequency noise is found when the back gate is biased in accumulation. However, it is shown that the characteristic time constant of the Lorentzian cannot be modeled assuming a uniform EVB tunneling current across the gate area of the MuGFETs. This indicates an impact of the three-dimensional nature of the device architecture on the so-called linear kink effects. In addition, it is demonstrated that the tensile strain in sSOI MuGFETs also yields a change in the Lorentzian parameters, associated with changes in the EVB tunneling current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 53, Issue 6, June 2009, Pages 613-620
Journal: Solid-State Electronics - Volume 53, Issue 6, June 2009, Pages 613-620
نویسندگان
N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, C. Claeys, E. Simoen,