Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization

Thin film transistors (TFTs) were fabricated inside a location-controlled, large Si grains through an advanced excimer-laser crystallization with a low temperature process. The field-effect mobility for electrons of the single-grain Si TFTs was as high as 597 cm2/V s. CMOS inverters are fabricated inside the location-controlled grain. Propagation delay per stage of 3.1 ns was successfully obtained with a supply voltage of 8 V.