Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications

Si-based resonant interband tunnel diodes (RITD) were monolithically integrated with Si/SiGe heterojunction bipolar transistors (HBT) on silicon substrates effectively creating a 3-terminal negative differential resistance (NDR) device. We demonstrate that the room temperature NDR in the IC–VEC characteristics under common emitter configuration can be controlled by a third terminal which is the basis of the integrated circuit. The estimated NDR values from the DC I–V characteristics, assuming that the NDR is linear, can be varied from about −27.5 Ω to −180 Ω with respect to VCE in the range of 0.96 V–1.16 V.