Annealing of ion-implanted SiC by laser-pulse-exposure-generated shock-waves

Athermal annealing in phosphorus, boron, and aluminum/boron implanted 4H-SiC is explored by launching mechanical shock waves, induced by exposure to a laser pulse. Annealing is observed in a 3.2 mm outer diameter donut-shaped area surrounding the laser exposed spot. The minimum sheet-resistance within this area in phosphorus-implanted sample is close to the thermally annealed value of 400 Ω/□. Unlike thermal annealing, shock annealing did not cause any redistribution of the implant, including boron, a known transient enhanced diffuser in SiC. Optimization of parameters like laser power and/or pulse duration or investigation of an alternate mechanical shockwave launching method is required to achieve athermal annealing far away from the center of the exposed region and similar to that of the thermal annealed material. Results of this study might help in the manufacturing of silicon carbide high-power, high-temperature, and radiation hardened devices in the future.