AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics

This paper presents simulated DC characteristics, using the commercially available software DESSIS, of an AlGaN/GaN HEMT, along with corroborating experimental measurements for validation, providing a framework for future optimization. The 2D simulations are reported using theoretically predicted values of polarization charges along with surface traps in the source–gate and gate–drain access regions. The necessity of including hydrodynamic (energy balance) transport, quantization models for accurate simulations is demonstrated along with insight into the inclusion of a lumped thermal resistance which is extended to non-isothermal simulations.