ZnO nanobridge devices fabricated using carbonized photoresist

Despite high interest for novel device applications, alignment and electrical integration of nanowires to lithographically defined features remains a challenge. In this work, ZnO nanowire devices were fabricated using a novel carbonized photoresist method in which photoresist is lithographically patterned, carbonized at elevated temperature, and then used to selectively seed growth of ZnO nanobridges between opposing carbonized photoresist electrodes. The pick and place method is avoided and selective growth of nanobridge structures is achieved without the use of metal catalysts or inorganic seed layers. Growth and electrical connection take place simultaneously. Electrical characterization of the electrical contact between the carbonized photoresist electrodes and the ZnO nanobridges is performed and operation of nanobridge devices as bottom gate three terminal field effect devices is demonstrated.